EPC Introduces a 12 V – 48 V 500 W GaN Boost Converter Demonstration with Same BOM Size as Silicon, Offering Superior Efficiency and Power Density

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GaN for high density servers

How to Design a 12 V to 48 V / 500 W 2-Phase Boost Converter Using eGaN FETs and the Renesas ISL81807 Controller with Same BOM Size as Silicon, Offering Superior Efficiency and Power Density

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EPC 3k5 648i - Epic Power Converters

Easy-to-Use Design Tools Reduce Time to Market for High Performance Gallium Nitride (GaN) Based Power System Designs

Motion Control: The Efficiency Trend in Motor Control, PDF, Power Electronics

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