Schematics of the fabrication process of the GaN-based blue-LED chip

Ultra-low-current driven InGaN blue micro light-emitting diodes for electrically efficient and self-heating relaxed microdisplay

Ultrasmall and ultradense InGaN-based RGB monochromatic micro-light-emitting diode arrays by pixilation of conductive p-GaN

Improvement of the Emission Intensity of GaN-Based Micro-Light Emitting Diodes by a Suspended Structure

Schematic illustration of the fabrication process of V-LEDs: (a) MOCVD

Materials, Free Full-Text

Improvement of the Emission Intensity of GaN-Based Micro-Light Emitting Diodes by a Suspended Structure

Study of efficient sustainable phosphor in glass (P – i – G) material for white LED applications fabricated by tape casting and screen-printing techniques - ScienceDirect

Process flow to prepare surface texturing of GaN-based LED.

Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

Figure 1 from Light emitting diode (LED) chip fabrication using low temperature processes

Enhanced performance of GaN-based visible flip-chip mini-LEDs with highly reflective full-angle distributed Bragg reflectors

SDK develops new crystal growth technology for GaN-based blue/white LEDs — LED professional - LED Lighting Technology, Application Magazine

III-Nitride LED Chip Fabrication Techniques